Published in
American Institute of Physics, Journal of Applied Physics, 1(99), p. 013515
DOI: 10.1063/1.2158501
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Defects and electrical behavior in 1MeV Si+-ion-irradiated 4H–SiC Schottky diodes
Journal article published in 2006 by
F. Roccaforte,
S. Libertino 
,
V. Raineri,
A. Ruggiero,
V. Massimino,
L. Calcagno
,
V. Raineri,
A. Ruggiero,
V. Massimino,
L. Calcagno
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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