Published in
American Institute of Physics, Journal of Applied Physics, 8(98), p. 083512, 2005
DOI: 10.1063/1.2103408
Links
Tools
Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface
Journal article published in 2005 by
J. Oswald,
J. Pangrác,
E. Hulicius,
T. Šimeček,
K. D. Moiseev 
,
M. P. Mikhailova,
Y.-U. P. Yakovlev
,
M. P. Mikhailova,
Y.-U. P. Yakovlev
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 