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American Institute of Physics, Applied Physics Letters, 18(86), p. 183108

DOI: 10.1063/1.1924883

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Toward the formation of three-dimensional nanostructures by electrochemical etching of silicon

Journal article published in 2005 by P. Kleimann, X. Badel, J. Linnros ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We report a simple technique to form various kinds of three-dimensional structures in silicon. The process flow is only composed of two steps: lithography and electrochemical etching (“LEE”). The LEE process is an easy and low-cost solution for the fabrication of high-aspect-ratio structures such as walls, tubes, and pillars. Here we demonstrate the possibility to apply the LEE process on the submicrometer scale, indicating that it is a promising tool for silicon nanomachining.