Dissemin is shutting down on January 1st, 2025

Published in

American Institute of Physics, Applied Physics Letters, 6(86), p. 063505

DOI: 10.1063/1.1861498

Links

Tools

Export citation

Search in Google Scholar

Origin of dark counts in In0.53Ga0.47As∕In0.52Al0.48As avalanche photodiodes operated in Geiger mode

Journal article published in 2005 by G. Karve, S. Wang, F. Ma, X. Li, J. C. Campbell, R. G. Ispasoiu, D. S. Bethune, W. P. Risk, G. S. Kinsey ORCID, J. C. Boisvert, T. D. Isshiki, R. Sudharsanan
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

A dark count rate in InP-based single photon counting avalanche photodiodes is a limiting factor to their efficacy. The temperature dependence of the dark count rate was studied to understand its origin in In0.53Ga0.47As∕In0.52Al0.48As separate-absorption-charge-multiplication avalanche photodiodes. The dark count rate was observed to be a very weak function of temperature in the range from 77Kto300K. Various mechanisms for dark count generation were considered. Simulations of band-to-band tunneling in the In0.52Al0.48As multiplication layer were found to agree well with the experimental temperature dependence of dark count rate at various excess biases. To reduce tunneling-induced dark counts, a suitable design change to the detector structure is proposed.