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Published in

American Institute of Physics, Journal of Applied Physics, 12(95), p. 7903

DOI: 10.1063/1.1719266

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Strongly nonlinear electronic transport in Cr-Si composite films

Journal article published in 2004 by H. Vinzelberg, J. Schumann, T. Nakama, K. Yagasaki, A. T. Burkov ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The phase formation, the resistivity and the thermopower of amorphous Cr0.15Si0.85, and nanocrystalline CrSi2-Si thin film composites have been studied. The films were produced by a magnetron sputtering of a composite target onto unheated substrates with subsequent crystallization of the film at high temperatures. As the film composite develops under the heat treatment from the initial amorphous state into the final polycrystalline material, two percolation thresholds were found. At first, the percolating cluster of nanocrystalline CrSi2 is formed. However, this cluster is destroyed with further annealing due to crystallization and redistribution of Si. The composite films which are close to this insulating threshold reveal a strongly nonlinear conductivity. The conductivity increases with the current by two orders of magnitude.