Published in
American Institute of Physics, Journal of Applied Physics, 12(94), p. 7520, 2003
DOI: 10.1063/1.1627461
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Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects
Journal article published in 2003 by
E. Lampin,
F. Cristiano,
Y. Lamrani,
A. Claverie,
B. Colombeau,
N. E. B. Cowern
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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