Published in
American Institute of Physics, Applied Physics Letters, 16(76), p. 2220
DOI: 10.1063/1.126302
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Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition
Journal article published in 2000 by
T. Wang,
T. Shirahama,
H. B. Sun 
,
H. X. Wang,
J. Bai,
S. Sakai,
H. Misawa
,
H. X. Wang,
J. Bai,
S. Sakai,
H. Misawa
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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