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Published in

American Institute of Physics, Applied Physics Letters, 6(74), p. 780

DOI: 10.1063/1.123365

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Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

Journal article published in 1999 by Masataka Higashiwaki ORCID, Satoshi Shimomura, Satoshi Hiyamizu, Seiji Ikawa
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Self-organized GaAs/(GaAs)4(AlAs)2 quantum-wire (QWR) lasers were grown on (775)B-oriented GaAs substrates by molecular-beam epitaxy. The QWRs were naturally formed at thick parts in the GaAs/(GaAs)4(AlAs)2 quantum well with a corrugated AlAs-on-GaAs upper interface and a flat GaAs-on-AlAs lower interface. The density of the QWRs was as high as 8×106 cm−1. Stripe-geometry lasers with the self-organized (775)B GaAs/(GaAs)4(AlAs)2 QWRs as an active region oscillated at 20 °C with threshold current densities of about 3 kA/cm2 for uncoated mirrors.