Published in
American Institute of Physics, Applied Physics Letters, 26(71), p. 3883-3885, 1997
DOI: 10.1063/1.120533
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Characteristics of GaAs and AlGaAs homojunction avalanche photodiodes with thin multiplication regions
Journal article published in 1997 by
K. A. Anselm,
P. Yuan,
C. Hu,
C. Lenox,
H. Nie,
G. Kinsey 
,
J. C. Campbell,
B. G. Streetman
,
J. C. Campbell,
B. G. Streetman
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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