Published in
American Institute of Physics, Applied Physics Letters, 19(71), p. 2812-2814, 1997
DOI: 10.1063/1.120194
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Growth and doping of Si layers by molecular-jet chemical vapor deposition: Device fabrication
Journal article published in 1997 by
D. Lubben,
G. Eres 
,
G. E. Jellison,
R. D. Westbrook,
R. F. Wood
,
G. E. Jellison,
R. D. Westbrook,
R. F. Wood
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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