Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance
Journal article published in 2014 by
Pei-Yang Gu,
Junkuo Gao 
,
Cai-Jian Lu,
Wangqiao Chen,
Chengyuan Wang,
Gang Li,
Feng Zhou,
Qing-Feng Xu,
Jian-Mei Lu,
Qichun Zhang
,
Cai-Jian Lu,
Wangqiao Chen,
Chengyuan Wang,
Gang Li,
Feng Zhou,
Qing-Feng Xu,
Jian-Mei Lu,
Qichun Zhang
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Abstract
Memory devices based on 4N4OPz exhibit excellent ternary memory behavior with high ON2/ON1/OFF current ratios and low switching threshold voltage.