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American Institute of Physics, Applied Physics Letters, 4(100), p. 041905

DOI: 10.1063/1.3679608

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Photoreflectance study of direct-gap interband transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

Journal article published in 2012 by H. P.;Wu P. H.;Huang Y. S.;Chrastina D.;Isella G.;Von Knel H.;Tiong K. K. Hsu ORCID, P. H. Wu, Y. S. Huang, D. Chrastina, G. Isella ORCID, H. von Känel, K. K. Tiong
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Photoreflectance (PR) was used to study the direct-gap interband transitions in strain-compensated Ge/SiGe multiple quantum well (MQW) structures with Ge-rich SiGe barriers grown by low-energy plasma-enhanced chemical vapor deposition. The PR spectra revealed a wide range of possible optical transitions in the MQW structure. Detailed lineshape fits to the PR spectra and comparison to a theoretical calculation based on the envelope-function approximation with conduction band-offset and stain compensation factor as adjust parameters led to the identification of various interband transitions. The results demonstrated that PR is a powerful technique for nondestructive optical characterization of Ge/SiGe MQW structures. ? 2012 American Institute of Physics.