Elsevier, Solar Energy Materials and Solar Cells, 1-4(87), p. 457-465
DOI: 10.1016/j.solmat.2004.07.033
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An algorithm for the calculation of solar cell parameters (series and parallel resistance, diode coefficient, reverse current density) calculation from its current–voltage characteristics at fixed illumination intensity is proposed. The possibility of determining the p–n junction depth on the basis of spectral dependencies of diode photocurrent at different values of the applied bias voltage is shown.