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American Institute of Physics, AIP Advances, 7(5), p. 079901
DOI: 10.1063/1.4926425
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Publisher’s Note: “Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices” [AIP Advances 5, 067140 (2015)]
This paper is made freely available by the publisher.
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