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Elsevier, Solid-State Electronics, (102), p. 69-75

DOI: 10.1016/j.sse.2014.06.001

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A study on HfO2 RRAM in HRS based on I–V and RTN analysis

Journal article published in 2014 by Francesco M. Puglisi, Paolo Pavan ORCID, Andrea Padovani, Luca Larcher
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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