2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves
DOI: 10.1109/irmmw-thz.2012.6380288
Full text: Unavailable
Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10(-11) W/Hz(1/2), and high-speed response.