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American Physical Society, Physical review B, 4(73), 2006

DOI: 10.1103/physrevb.73.041304

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Evidence for multiple impurity bands in sodium-doped silicon MOSFETs

Journal article published in 2005 by T. Ferrus ORCID, R. George, Chw H. W. Barnes, N. Lumpkin, Dj J. Paul ORCID, M. Pepper
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature. ; Comment: 4 pages; 5 figures; Published in PRB Rapid-Communications