Published in
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
DOI: 10.1109/icsict.2012.6467800
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P-type InGaN across entire composition range
Proceedings article published in 2012 by
K. Wang,
T. Katsuki,
J. Sakaguchi,
T. Araki,
Y. Nanishi,
K. M. Yu 
,
M. A. Mayer,
E. Alarcon Llado,
J. W. Ager ,
W. Walukiewicz
,
M. A. Mayer,
E. Alarcon Llado,
J. W. Ager ,
W. Walukiewicz
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Abstract
We report a systematic investigation on Mg doped InGaN epilayers grown by plasma-assisted molecular beam epitaxy. Hall effect, thermopower and electrochemical capacitance voltage experiments have been combined to investigate the conduction properties. The results show the realization of p-type InGaN across the entire alloy composition range.