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Wiley-VCH Verlag, Chemical Vapor Deposition, 1(8), p. 17, 2002

DOI: 10.1002/1521-3862(20020116)8:1<17::aid-cvde17>3.0.co;2-3

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Deposition of iridium thin films using new IrI CVD precursors

Journal article published in 2002 by Yao-Lun Chen, Chao-Shiuan Liu, Yun Chi ORCID, Arthur J. Carty, Shie-Ming Peng, Gene-Hsiang Lee
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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Abstract

The syntheses of three volatile IrI cyclooctadiene precursors is described. The anionic ligand was carefully selected to produce a structure (see Figure) with physical properties suitable for CVD requirements. Films grown using oxygen as carrier gas produced iridium thin films with a purity higher than 98 % and a measured resistivity in the range of 8.4 to 10.2 μΩ cm. ; NRC Pub: yes