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Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 5(62), p. 1498-1503, 2015

DOI: 10.1109/ted.2015.2412452

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Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors

This paper is available in a repository.
This paper is available in a repository.

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Abstract

Through their high gain and low saturation voltage, source-gated transistors (SGTs) have applications in both analog and digital thin-film circuits. In this paper, we show how we can design SGT-based logic gates, which are practically unaffected by temperature variations. We discuss design characteristics, which ensure reliable operation in spite of SGT temperature dependence of drain current, and their implications for manufacturability and large signal operation.