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Instytut Podstaw Informatyki, Acta Physica Polonica A, 6(122), p. 1105-1107, 2012

DOI: 10.12693/aphyspola.122.1105

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Semiconducting Properties of Cu 5 SbO 6

Journal article published in 2012 by T. Groń, E. Filipek, G. Dąbrowska, H. Duda, S. Mazur, Z. Kukuła, S. Pawlus
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Thermoelectric power, electrical resistivity, I-V characteristics, relative electrical permittivity, dc magnetization and ac magnetic susceptibility measurements carried out on Cu5SbO6 showed p-type semiconducting behaviour with the activation energy of 0.24 eV as well as ferrimagnetic order with the Neel temperature of 5.2 K. The effective magnetic moment of 5.857 μB/f.u. revealed the orbital contribution to the magnetic moment. Large value of the relative electrical permittivity indicated that the Cu2+ ions with the unscreened and unfilled electron shells are responsible for the polarizability and forming of electric dipoles.