Observation of topological phase transition by terahertz photoconductivity in HgTe-based transistors
Journal article published in 2016 by
Aleksandr M. Kadykov,
Christophe Consejo,
M. Marcinkiewicz,
L. Viti,
M. S. Vitiello,
Sergey S. Krishtopenko,
Sandra Ruffenach,
S. V. Morozov,
Wilfried Desrat 
,
Nina Diakonova,
N. Dyakonova,
Wojciech Knap,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretsky
and other authors.
,
Nina Diakonova,
N. Dyakonova,
Wojciech Knap,
V. I. Gavrilenko,
N. N. Mikhailov,
S. A. Dvoretsky
and other authors.
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Abstract
We have found the possibility to probe the magnetic field-driven topological phase transition in HgTe-based transistors by measuring their Terahertz photoconductivity response. At the critical magnetic field to which zero-mode Landau levels cross, we have observed a pronounced photoconductivity peak independent on incident frequency and carrier concentration. Our results pave the way towards terahertz topological field effect transistors.