We present a Raman investigation of the temperature effect of single and few layer MoTe2 at an electronic device working temperature range from 300 K to 500 K. We observe linear frequency red-shifts with increasing temperature for the first order Raman active E12g, A1g, Raman inactive B12g mode, and the second order ω2 mode, which can be attributed to the anharmonic effect of the interatomic potential energy. The temperature coefficients of the out-of-plane vibrational B12g modes and inplane vibrational E12g modes are similarly around −0.013 cm−1/K, while lower than that of out-of-plane vibration A1g mode at −0.009 cm−1/K. The temperature coefficient of ω2 mode is −0.00521 cm−1/K, approximately half of those of the first order modes, and the temperature coefficient of transverse acoustic TA (M) mode is indirectly deduced as −0.0102 cm−1/K, which shows the corresponding Mo-Te stretching bonds of TA (M) mode behavior similarly to those of optical Raman vibrations. Our work thus provides temperature dependent lattice vibration information of MoTe2 and could be potentially useful in future optoelectronic devices based on MoTe2 related two dimensional materials.