Instytut Podstaw Informatyki, Acta Physica Polonica A, 3(94), p. 401-405
DOI: 10.12693/aphyspola.94.401
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Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn0.44Mg0.56Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.