We formed oxide films on n-type 6H-SiC by an anodic oxidation method. As the electrolyte, a mixed solution of ethylene glycol, water and KNO₃ was employed. By applying voltage with constant current to 6H-SiC, an oxide film was formed on the sample. The oxide was easily etched by HF. The formation rate for the anodic oxide was much higher than the typical thermal oxidation rate for 6H-SiC. By using this method for sacrificial oxidation before contact formation, Al ohmic contact resistance was reduced compared with those on an as-received surface.