Published in
American Institute of Physics, Applied Physics Letters, 7(108), p. 072901
DOI: 10.1063/1.4942093
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Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
Journal article published in 2016 by
J. W. Roberts,
P. R. Chalker,
K. B. Lee,
P. A. Houston,
S. J. Cho,
I. G. Thayne 
,
I. Guiney,
D. Wallis ,
C. J. Humphreys
,
I. Guiney,
D. Wallis ,
C. J. Humphreys
This paper is made freely available by the publisher.
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