Published in

IOP Publishing, Japanese Journal of Applied Physics, 1A(33), p. L70, 1994

DOI: 10.1143/jjap.33.l70

Links

Tools

Export citation

Search in Google Scholar

Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

We investigated the spatial distribution of densely contact-electrified electrons on a silicon oxide layer in air with a modified AFM. From the observed full width at half-maximum (FWHM) and the peak value, we found that the spatial stable-unstable phase transition occurs. We also found, for the first time, that an unstable state exists around the stable state, and that the boundary of the stable state collapses into the unstable state. We also found that the stable state turns into the unstable state by a spatial phase transition and subsequently into the trapped state.