Published in
American Institute of Physics, Applied Physics Letters, 15(97), p. 159902
DOI: 10.1063/1.3501973
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Erratum: “Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor” [Appl. Phys. Lett. 97, 082106 (2010)]
Journal article published in 2010 by
C. Ciccarelli 
,
B. G. Park,
S. Ogawa,
A. J. Ferguson,
J. Wunderlich
,
B. G. Park,
S. Ogawa,
A. J. Ferguson,
J. Wunderlich
This paper is made freely available by the publisher.
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