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IOP Publishing, Semiconductor Science and Technology, 3(8), p. 357-363

DOI: 10.1088/0268-1242/8/3/009

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Optical observation of interactions between extended and localized states in a GaAs/AlGaAs waveguide superlattice structure

Journal article published in 1993 by S. V. Ivanov, P. S. Kop'ev, T. V. Shubina, A. A. Toropov ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The authors present theoretical and experimental investigation of absorption in a GaAs quantum well (QW) embedded in an AlGaAs short-period superlattice (SL) An exact numerical calculation for a QW-SL system reveals a field-induced interaction between the light-hole and electron states localized in the QW and SL extended states, which results in a specific resonance (step-like) reduction of the electron and light hole overlap. Room-temperature light-hole excitonic electroabsorption measured in a graded refractive index waveguide with a QW embedded in the SL is shown to be in qualitative agreement with theoretical predictions. The structure provides an extremely low-voltage modulation with a waveguide absorption change of 430 cm-1 at 1.5 V.