Thin crystalline silicon films on glass substrate, fabricated using solid phase crystallization for application in thin-film solar cells, were investigated by deep level transient spectroscopy (DLTS). The analyses of the DLTS spectra obtained during temperature scans revealed presence of carrier traps related to dislocations in silicon. Other carrier traps of yet unknown nature were detected as well. Variations of electrical activity of the traps were achieved applying variations in the process of the film formation. These changes were also detected during DLTS measurements, suggesting a possibility for applying of DLTS for the investigation and characterization of the thin-film Si material on glass.