Trans Tech Publications, Solid State Phenomena, (139), p. 113-118
DOI: 10.4028/www.scientific.net/ssp.139.113
Trans Tech Publications, Solid State Phenomena, p. 113-118
DOI: 10.4028/3-908451-56-6.113
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Motivated by the possibility of scaling down of various electronic devices at the nanolevel, we have chosen a simple p-n junction like device in silicon structure. An aggregation of seventy-eight silicon atoms, passivated by oxygen is considered. We compute the electronic structure of such a cluster and then the density of states and the optical spectra for this aggregate are compared with a modified one. The modification is introduced by substituting phosphorus and boron atom within this cluster of silicon atoms in both sides in order to make a p-n junction like situation. A variant of this p-n junction like structure is introduced by adding a layer of oxygen between the phosphorus and boron regions. Comparison of the electronic structures of all these systems reveals several interesting properties.