Trans Tech Publications, Materials Science Forum, (821-823), p. 974-977, 2015
DOI: 10.4028/www.scientific.net/msf.821-823.974
Full text: Unavailable
High temperature solution growth of Al4SiC4 single crystals was carried out from the melt of silicon and aluminium pieces in a graphite crucible used as carbon source (typically 1800°C under 1 bar of argon). The obtained crystals, in the mm scale, were then characterized by a variety of techniques including: Raman spectroscopy, transmission electron microscopy techniques, X-ray diffraction and UV-Vis-NIR spectroscopy. A good structural quality was revealed by TEM, ensuring a well resolved Raman spectrum. The UV-Vis transmission spectrum shows an optical gap located around 2-2.5 eV.