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Trans Tech Publications, Materials Science Forum, (778-780), p. 121-124, 2014

DOI: 10.4028/www.scientific.net/msf.778-780.121

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4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

Journal article published in 2014 by Marco Mauceri, Antonio Pecora, Grazia Litrico, Carmelo Vecchio, Marco Puglisi, Danilo Crippa, Nicolo Piluso, Massimo Camarda ORCID, Francesco La Via ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Preliminary results of 150mm SiC 4H 4°off have been obtained with the new 150mm automatic horizontal hot wall reactor PE1O6, using chlorinated chemistry (SiHCl3 + C2H4). A new injection system has been tested in two configurations and results will be shown in this paper. AFM surface roughness measurements and epi defect density have been reported.