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Trans Tech Publications, Materials Science Forum, (717-720), p. 625-628, 2012

DOI: 10.4028/www.scientific.net/msf.717-720.625

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Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

Journal article published in 2012 by Adrien Michon, Elodie Roudon, Marc Portail, Benoit Jouault, Sylvie Contreras, Sébastien Chenot, Yvon Cordier ORCID, Denis Lefebvre, Stephane Vézian, Marcin Zielinski ORCID, Thierry Chassagne ORCID, Jean Camassel
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6Ö3´6Ö3)-30° interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.