Trans Tech Publications, Materials Science Forum, (556-557), p. 469-472, 2007
DOI: 10.4028/www.scientific.net/msf.556-557.469
Trans Tech Publications, Materials Science Forum, p. 469-472
DOI: 10.4028/0-87849-442-1.469
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Scandium can be used to influence the stoichiometry of SiC during growth of the hexagonal polytypes. Using PL-EPR and total energy calculations in the framework of density functional theory, scandium is predicted to be built in predominantly at the Si-sublattice in form of ScSi acceptors with acceptor levels at 0.55 eV (6H-SiC) and 0.48 eV (4H-SiC). In addition, new PL-EPR spectra are found with a large anisotropy in the g-tensor suggesting defect pairs as an origin.