Trans Tech Publications, Materials Science Forum, (527-529), p. 1167-1170, 2006
DOI: 10.4028/www.scientific.net/msf.527-529.1167
Trans Tech Publications, Materials Science Forum, p. 1167-1170
DOI: 10.4028/0-87849-425-1.1167
Full text: Unavailable
The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.