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Trans Tech Publications, Materials Science Forum, (527-529), p. 115-118

DOI: 10.4028/www.scientific.net/msf.527-529.115

Trans Tech Publications, Materials Science Forum, p. 115-118

DOI: 10.4028/0-87849-425-1.115

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Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution

Journal article published in 2006 by Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara ORCID, Kazuo Nakajima
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We carried out the growth of single crystalline silicon carbide (SiC) from Si-C-X (X= Co, Fe) ternary solutions. These ternary solutions are expected to show large carbon solubility compared with Si solvent (self-flux) by means of CALPHAD (CALculation of PHAse Diagrams) method. We investigated the growth rate and the polytype of the grown crystal from the ternary solutions. Then we found that the growth rate from the ternary solutions is much larger than that from the self-flux. The growth rate from Si-C-Co (Si-C-Fe) system was about 6mm/hr (12mm/hr) while that from the self-flux was only 2mm/hr. The grown crystal from the ternary solutions is classified into 6H that takes over the seed polytype.