A modulation of terahertz response in a highly efficient, electric-controlled conjugated polymer-silicon hybrid device with low photo-excitation was investigated. The polymer-silicon forms a hybrid structure, where the active depletion region modifies the semiconductor conductivity in real time by applying an external bias voltage. The THz transmission was efficiently modulated by effective controlling. In a THz-TDS system, the modulation depth reached nearly 100% when the applied voltage was 3.8 V at an external laser intensity of 0.3 W/cm2. The saturation voltage decreased with increasing photo-excited intensity. In a THz-CW system, a significant decline in THz transmission was also observed with increasing applied bias voltage. This reduction in THz transmission is induced by the enhancement of carrier density.