We demonstrated the fabrication of 10 emitters InGaN laser diode array of the maximum output power of 9 W at 420 nm. The device as a whole has the differential efficiency of above 1 W/A. The maximum output power is limited to 9 W (pulse operation) by catastrophic mirror damage or to around 5 W in CW operation by thermal roll-over. Larger arrays with stripes width of around 15 µm and numbers of emitters up to 20 should enable reaching 20 W, which is suitable for light engine of desktop projectors and a building block of cinema theater projectors.