We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorbance, corresponding to contorted bonds, increases with increased In content. Above 10% of In, the presence of another defect, the concentration of which increases with In content, has been correlated with x-ray diffraction and Raman. We suggest that this defect corresponds to nitrogen vacancies, in agreement with a reported model for GaN.