(200)-oriented Eu-doped cerium oxide thin films were fabricated, on fused silica substrates by a chemical solution deposition method. The thin films obtained were characterized by X-ray diffraction, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence measurements. Ce with valence state 4 + is confirmed to be predominant in Eu-doped CeO2 thin films. All the thin films were dense and crack-free, and showed bright orange-red emissions under ultraviolet light excitation, originated from the 5D0 → 7F1 and 5D0 → 7F2 transitions of Eu3 + ions. Structure distortions induced by Eu-doping affected the light emission of electric dipole transition 5D0 → 7F2. The strongest photoluminescent intensity was observed in the thin films with a Eu-doping content x of 0.08, indicating the existence of concentration quenching effect of photoluminescence. Lifetime study of photoluminescence indicated that the decrease of lifetime was originated from augmented pathway for deactivating excited Eu3 + ions. Our study suggests that Eu3 +-doped CeO2 thin films have potential applications in optoelectronic devices.