For the first time Inverted ternary bulk hetrojunction hybrid photovoltaic device based on AgInSe2 – polymer blend as absorber and PEDOT:PSS as hole transport layer was fabricated and characterized. Blends of MDMOPVV.PCBM.AIS (MDMOPVV-Poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene], PCBM-(Phenyl-C61-butyric acid methyl ester), AIS-AgInSe2) used as absorber layer. Bulk hetrojuction hybrid Photovoltaic device Ag/PEDOT:PSS /MDPVV.PCBM.AIS/ZnO/ITO was fabricated and tested with standard solar simulator and device characterization system as inverted cell configuration. The best performance and photovoltaic parameters, we obtained was an open-circuit voltage of about Voc 0.24 V and a photocurrent density Jsc 0.56 (mA/cm2), 28.4 (%) FF and an efficiency of 0.038 percent using a white light illumination intensity of 100mW/cm2. Further improvement efforts for better performance are on the way. Successful fabrication and working of this inverted device suggest further optimizations like spinning rate/thickness/solvents/depositions rates for active layers and proceeding further in light of knowledge of recombination studies and molecular modeling of AIS nanopowder with this organic system for better performance of a bulk hetrojunction hybrid solar cell.