The class of half Heusler compounds opens possibilities to find alternatives for II VI or III V compound semiconductors. We aim to find suitable substitutes for the cadmium sulphide buffer layer in chalcopyrite based thin film solar cells, where the buffer layer is located between the p type chalcopyrite absorber and an n type transparent window layer. We report here the preparation of radio frequency sputtered lithium copper sulphide LiCuS and lithium zinc phosphide LiZnP films. The optical analysis of these films revealed band gaps between 1.8 and 2.5 eV, respectively. Chemical properties of the film surface and both interfaces between the film and a Cu In,Ga Se2 layer and between the film and an Zn,Mg O layer were investigated by in situ photoelectron spectroscopy. The valence band offsets to the Cu In,Ga Se2 layer were estimated to be 0.4 0.1 eV for LiCuS Cu In,Ga Se2 and 0.5 0.8 eV for LiZnP Cu In,Ga Se2. This leads to positive conduction band offsets of N 1 eV. These rather large offsets are not compatible with efficient solar cell devices. Under atmospheric conditions LiCuS and LiZnP films show rapid decomposition.