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American Institute of Physics, Low Temperature Physics, 8(28), p. 706-712, 2002

DOI: 10.1063/1.1511717

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Influence of structural inhomogeneity on the luminescence properties of silicon nanocrystallites

This paper is available in a repository.
This paper is available in a repository.

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Abstract

The features of the photoluminescence and the manifestation of thermally stimulated and tunneling luminescence due to the separation of nonequilibrium charge carriers between the photoexcited silicon core of a nanocrystallite and its peripheral layers of SiOx and SiO2 are investigated for different forms of nanostructured silicon. A model is proposed wherein a “two-stroke charge piston” acts in turn on the electron and hole components by means of an Auger process which occurs under restricted volume conditions and brings about a spatial separation of the charge carriers.