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American Physical Society, Physical review B, 6(88)

DOI: 10.1103/physrevb.88.060403

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Change of magnetic ground state by light electron doping in CeOs_{2}Al_{10}

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This paper is available in a repository.

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Abstract

The effect of Ir substitution for Os in CeOs2Al10, with an unusually high Néel temperature of T*∼28.5 K, has been studied by high-resolution neutron diffraction and magnetization measurements. A small amount of Ir (∼8%) results in a pronounced change of the magnetic structure of the Ce sublattice. The induced magnetic ground state is controlled by single ion anisotropy and implies an antiferromagnetic arrangement of the Ce moments along the a axis, as expected from the anisotropy of the paramagnetic susceptibility. The value of the ordered moments, 0.92(1)μB, is substantially bigger than in the undoped compound, whereas the transition temperature is reduced down to 21 K. A comparison of the observed phenomena with the recently studied CeRu1.9Rh0.1Al10 system, exhibiting similar behavior [ Kondo et al. J. Phys. Soc. Jpn. 82 054709 (2013)], strongly suggests the electron doping as the main origin of the ground state changes. This provides additional ways for exploring the anomalous magnetic properties of the Ce(Ru/Os)2Al10 compounds.