Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 4(37), p. 482-485, 2016
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Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium
,
Marc Schaekers,
Tom Schram ,
Wolfgang Aderhold,
Abhilash J. Mayur,
Jerome Mitard,
Liesbeth Witters,
Kathy Barla,
Nadine Collaert,
Naoto Horiguchi,
Aaron Thean,
Kristin De Meyer
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Abstract
Ti/p-Ge and NiGe/p-Ge contacts are compared on both planar and fin based devices. Ti/p-Ge contacts show low contact resistance, while NiGe/p-Ge devices show short circuit problems due to thermally driven Ni diffusion. Considering the thermal budget in the standard backend of line processing for CMOS, Ti is more suitable for p-Ge devices. A low Ti/p-Ge contact resistivity of 1.1×10-8 Ω·cm2 is achieved by using a multi-pulse laser annealing technique for B activation.