Published in
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
DOI: 10.1109/iedm.2004.1419283
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Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation
Proceedings article published in 2005 by
J. S. Kolhatkar,
E. Hoekstra,
A. P. van der Wel,
C. Salm,
E. A. M. Klumperink,
J. Schmitz 
,
H. Wallinga
,
H. Wallinga
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Abstract
The behavior of RTS noise in MOSFETs under large-signal excitation is experimentally studied. Our measurements show a significant transient effect, in line with earlier reports. We present a new physical model to describe this transient behavior and to predict RTS noise in MOSFETs under large-signal excitation. With only three model parameters the behavior is well described, contrary to existing models.