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Elsevier, Thin Solid Films, 18(516), p. 6293-6299

DOI: 10.1016/j.tsf.2007.12.118

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Infrared reflection spectroscopy of Zn2SnO4 thin films deposited on silica substrate by radio frequency magnetron sputtering

This paper is available in a repository.
This paper is available in a repository.

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Abstract

Single-phase zinc-stannate thin films of different thickness values were prepared by radio frequency magnetron sputtering on a silica substrate. Rietveld analysis of X-ray diffraction data confirmed that the films had an inverse spinel structure, with a cation inversion parameter of 0.8. Room temperature far and mid infrared reflectivity spectra were measured in the range 50–4000 cm− 1. The reflectivity diagrams were analyzed using the four-parameter model of coupled oscillators for optical phonons with a standard multi-layer technique taking into account the thin-film layer and the substrate. The optical parameters were determined for seven oscillators belonging to the spinel structure. Their origin was discussed in relation to non-stoichiometry of the thin film and cation disorder in the crystal lattice. Born effective charges were calculated from the transversal/longitudinal splitting.