Mid-wave infrared (MWIR) technology is dominated by HgCdTe and GaAs/AlGaAs intersubband quantum well infrared photodetectors (QWIP). However, in terms of performance, InAs/GaSb type II superlattice (T2SL) has shown theoretical potential to compete with HgCdTe. T2SLs InAs/GaSb technology is under development, where proper detector’s architecture formation must be considered as one of the most important steps of the fabrication process. The paper presents experimental results related to chemical etching of the T2SLs InAs/GaSb with bulk AlGaSb barriers, mesa type nBn MWIR detectors. The layers presented in this work were grown on GaSb substartes in Center for High Technology Materials, University of New Mexico, Albuquerque, USA, while device fabrication process was performed at Military University of Technology. Although, we attempted to transfer HgCdTe etching solutions: Br2+C2H6O2 into T2SLs InAs/GaSb technology, H3PO4 + C2H8O7 + H2O2 + H2O (molar ratio: 1:1:4:16) at temperature ~21°C was estimated to have optimal parameters in terms of the mesa profile shaping [1]. The mesa profiles and I-V characteristics after each etching procedure were shown and influence of etching solutions on the surface morphology was presented