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Materials Research Society, Materials Research Society Symposium Proceedings, (794), 2003

DOI: 10.1557/proc-794-t10.6

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Effects of substrate orientation on the spontaneous ordering of GaAsSb epilayers grown by molecular beam epitaxy

Journal article published in 2003 by Brian P. Gorman, G. B. Stringfellow, Andrew G. Norman ORCID, Reiko Lukic Zrnic, Terry D. Golding, R. S. Goldman, Chris L. Littler, R. Noetzel
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Abstract

ABSTRACTSpontaneous atomic ordering is investigated in a series of GaAs1−xSbx epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) – 8° toward (111)A, (001) – 8° toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs1−xSbx grown on (111)A-type orientations.